Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), France

Contact :
Nathalie Rolland

The Institute of Electronics, Microelectronics and Nanotechnoloy (IEMN), is mixed research unit UMR CNRS 8520, and gather 460 researchers working on a wide field from basic physics to advanced III-V and Silicon devices and micro-systems down to applications in telecommunications, microfluidics, sensors and sensors network. IEMN has a long experience in micro and nano technologies from simulation and design to fabrication and characterization. The institute disposes of 1600 m2 of clean rooms (largest academic technological facilities in France) devoted to advanced III-V devices, Microsystems and microfluidics and future nano devices.

In the field of device fabrication, more than 16 engineers and technicians are full-time working in the 1600 m2 of technological facilities of CNRS-IEMN. The technology is based on a 2’’ line with state of the art e-beam lithography for the most advanced devices. State of the art devices have been fabricated such as metamorphic AlInAs/GaInAs HEMTs or GaInP/GaInAs/GaAs HEMTs The nitride FETs development is carried out in the frame of TIGER, a common laboratory between CNRS-IEMN and TRT. IEMN has also a high expertise in the field of device characterization and microwave measurements. Wafer probing vectorial measurements are possible up to 325 GHz at ambient temperature, and up to 50 GHz for low temperature (4 K) and high temperature (600 K) respectively as well as non linear microwave device characterization using active and passive load pull test benches up to 50 GHz. A very accurate and original extraction method from S parameters and DC measurements, allowing the deduction of the elements constituting the equivalent circuit of FET’s, has been conceived in the Institute and implanted in several French industrial laboratories. Noise measurements can be performed from megahertz up to 50 GHz at 60 GHz and 75-110 GHz using a noise analyzer with appropriate mixers and calibrated noise sources. We are able to investigate linearity on large signal devices either on a 2-tone set-up or by NPR.

IEMN has also developed an advanced simulation and CAD platform using in house and commercial simulation tools for the optimum design of active and passive devices up to the millimetre wave range. Electrical, electromagnetic, mechanical and thermal simulations are possible using for example ADS, CST Microwave Studio, HFSS, ANSYS, Coventor, Comsol, …sofwares

IEMN has developed in parallel an advanced telecom laboratory which enables the generation and the analysis of complex signals in time and frequency domains up to 80 GHz.

Laboratory resources:
Commercial CAD and simulation tools (ADS, CST microwave Studio, ANSYS, Coventor, HFSS). Wafer probing up to 320 GHz with vectoriel network analyzers. A very accurate and original extraction method from S parameters and DC measurements, allowing the deduction of the elements constituting the equivalent circuit of FET’s. Automatic phase noise test bench up to 110 GHz. MEMS characterization facilities (optical, mechanical, electrical, etc).

Farid Medjdoub 10 years experience in III-V device physics, conception and fabrication as described in the following:

  • 2000 – 2004: PhD at IEMN (France): Conception, fabrication and characterization of InP HEMTs operating at 94 GHz (W band)
    • Modelisation of advanced InP HEMT structures using innovative channel materials as well as original InP etch stop layer
    • Realization of 50 nm gate length InP devices
    • State-of-the-art output power density achieved at 94 GHz
  • 2004 – 2007: Post-doc at Ulm University: Development of a novel InAlN/GaN heterostructure
    • Conception of a new InAlN/GaN structure design (2 patents pending)
    • Achievement of the following features resulting from the optimization and the characterization of InAlN/GaN HEMTs: Highest current density and Highest temperature stability observed on a GaN-based transistor, possibility to scale the device structure down to few nanometer in view of high frequency operation.
  • 2007 – 2010: Senior scientist at IMEC: Development of reliable RF GaN-based heterostructure by means of in-situ SiN cap layer
    • Project leader within “GREAT”. Achievement of highly reliable AlGaN/GaN on Si substrate at 2 GHz capped with in-situ SiN showing state-of-the-art power performance
    • Development of ultrathin barrier SiN/AlN/GaN HEMTs for high frequency operation

Nathalie ROLLAND received a Engineer degree in microelectronics in 1986, a PhD degree in electronics from the University of LILLE in 1989 and a HDR degree in 2002. She is currently Assistant Professor at the University of LILLE at the engineer school Polytech’lille and develops research at IEMN.

From 1989 to 2000 she has investigated quasi-optical approaches and 3D interconnects for millimetre wave devices, circuits and subsystems for radar and communication application. Since 2000 she is mainly involved in the field of advanced communication systems for smart Object Communication and sensors networks in the millimetre wave range and is responsible at IEMN of two projects on these topics. She as a long experience in circuits and subsystems design, assembly and characterisation. The role in the project: simulation EM 3D

Thales Alenia Top Gan iemn Recherche Formation Transfert Thales Research & Technology EADS Uppsala Universitet